2SD2389 Overview
Key Specifications
Mount Type: Through Hole
Description
With TO-3PN package - Complement to type 2SB1559 - High DC current gain APPLICATIONS - Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 150 5 8 1 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=6A ;IB=6mA IC=6A ;IB=6mA VCB=160V IE=0 VEB=5V; IC=0 IC=6A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=12V 5000 85 80 MIN 150 2SD2389 SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V 2.5 3.0 100 100 V V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=6A;RL=10A IB1=- IB2=6mA VCC=60V 0.6 10.0 0.9 µs >s >s hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2389 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 4.
