With TO-3P(I) package
Complement to type 2SB1557
High breakdown voltage:VCEO=140V(Min)
APPLICATIONS
Power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratin
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SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2386
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min)
APPLICATIONS ·Power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 7 0.
2SD2386 Datasheet
