2SD2386 Datasheet
2SD2386 Datasheet (Toshiba)
Toshiba
2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary .
40 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 6 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 140 5000 2000 ― ― ― ― Note: hFE (1) classifica.
2SD2386 Datasheet (SavantIC)
SavantIC
·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte.
tor cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=6A ;IB=6mA IC=6A ; VCE=5V VCB=140V IE=0 VEB=5V; IC=0 IC=6A ; VCE=5V IC=10A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 5000 2000 90 30 MIN 140 w.