2SD2386 - NPN Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SD2386
Manufacturer	Toshiba Semiconductor
File Size	132.05 KB
Description	NPN Transistor
Datasheet	2SD2386 Datasheet
Additional preview pages of the 2SD2386 datasheet.

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Full PDF Text Transcription

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2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140 5 7 0.1 70 150 −55 to 150 Equivalent Circuit Unit V V V A A W °C °C COLLECTOR BASE JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.

Published: Apr 3, 2005 |