2SD2389 Datasheet and Specifications PDF

The 2SD2389 is a Silicon NPN Transistor.

Key Specifications

Mount TypeThrough Hole
Part Number2SD2389 Datasheet
ManufacturerSanken
Overview Equivalent circuit C Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2389 160 150 5 8 1 80(Tc=25°C) 150 –55 to +150 2SD2389 sElectrical Characteristics Symbol ICBO IE. 6 IB2 (mA)
*6 ton (µs) 0.6typ tstg (µs) 10.0typ tf (µs) 0.9typ Weight : Approx 2.0g a. Type No. b. Lot No. I C
* V CE Characteristics (Typical) 5m 2. A 0m A V CE ( sat )
* I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C
* V BE Temperature Characteristi.
Part Number2SD2389 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simp. ut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=6A ;IB=6mA IC=6A ;IB=6mA VCB=160V IE=0 VEB=5V; IC=0 IC=6A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=12V 5000 85 80 MIN 150 2SD2389 SYMBOL VCEO VCEsat VBEs.
Part Number2SD2389 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Co. specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 6mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff C.

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