| Part number | 2SD2406 |
|---|---|
| Datasheet | 2SD2406-INCHANGE.pdf |
| File Size | 209.31 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2406 | Silicon NPN Transistor | Toshiba Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2400 | NPN Transistor |
| 2SD2401 | NPN Transistor |
| 2SD2438 | NPN Transistor |
| 2SD2439 | NPN Transistor |
| 2SD2454 | NPN Transistor |
| 2SD2488 | NPN Transistor |
| 2SD2490 | NPN Transistor |
| 2SD2493 | NPN Transistor |
| 2SD2494 | NPN Transistor |
| 2SD2495 | NPN Transistor |
