Datasheet Details
| Part number | 2SD2406 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.31 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2406 Datasheet
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| Part number | 2SD2406 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.31 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2406 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2406 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2406 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2406 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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| 2SD2495 | NPN Transistor |