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2SD2406 - NPN Transistor

2SD2406 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Good Linearity of hFE. Mi.

2SD2406 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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Datasheet Details

Part number
2SD2406
Manufacturer
INCHANGE
File Size
209.31 KB
Datasheet
2SD2406-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2406-like datasheet