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2SD2406 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector Power Dissipation- : PC= 25W@ TC= 25℃ Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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Datasheet Details

Part number 2SD2406
Manufacturer INCHANGE
File Size 209.31 KB
Description NPN Transistor
Datasheet download datasheet 2SD2406 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2406 isc website：www.iscsemi.
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