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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2406
Power Amplifier Applications
2SD2406
Unit: mm
• High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C)
VCBO VCEO VEBO
IC IB
PC
80 V 80 V 5V 4A 0.4 A
25 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.
2SD2406 Datasheet
