Datasheet4U Logo Datasheet4U.com

2SD256 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) Collector Power Dissipation- : PC= 25W @TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SD2560 - Silicon NPN Transistor (Sanken electric)
  • 2SD2560 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2561 - Silicon NPN Transistor (Sanken electric)
  • 2SD2562 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
  • 2SD2562 - Silicon NPN Transistor (Sanken)
  • 2SD2565 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2568 - Power Transistor (Rohm)
  • 2SD2500 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2500 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2504 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.
Published: |