2SD256 transistor equivalent, silicon npn power transistor.
*Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
*Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min)
*Collector Power Dissipation-
: PC= 25W @TC= 25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in genera.
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