2SD288 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications.
| Part number | 2SD288 |
|---|---|
| Datasheet | 2SD288-INCHANGE.pdf |
| File Size | 212.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD288 | Silicon NPN Power Ttransistors | TGS |
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2SD288 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SD289 | NPN Transistor |
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| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |
| 2SD2012 | NPN Transistor |
| 2SD2014 | NPN Transistor |
| 2SD2015 | NPN Transistor |
| 2SD2016 | NPN Transistor |
| 2SD2017 | NPN Transistor |