2SD288 - Silicon NPN Power Ttransistors

TGS

2SD288 silicon npn power ttransistors by TGS - Datasheet Preview

Datasheet Details

Part number	2SD288
Manufacturer	TGS
File Size	166.81 KB
Description	Silicon NPN Power Ttransistors
Datasheet	2SD288 Datasheet

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TIGER ELECTRONIC CO.,LTD Silicon NPN Power Ttransistors Product specification 2SD288 APPLICATIONS .Low frequency power amplifier .Power regulator applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 55 V 6.0 V 3.0 A 0.3 A 25 W 150 oC -55~150 oC TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICEO VCB=55V, IE=0 Emitter Cut-off Current IEBO VEB=6.0V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO IC=10mA, IB=0 hFE VCE=5V, IC=0.