Datasheet Details
| Part number | 2SD289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SD289-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD289.
| Part number | 2SD289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SD289-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD289 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Part Number | Description |
|---|---|
| 2SD288 | NPN Transistor |
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| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |
| 2SD2012 | NPN Transistor |
| 2SD2014 | NPN Transistor |
| 2SD2015 | NPN Transistor |
| 2SD2016 | NPN Transistor |
| 2SD2017 | NPN Transistor |