2SD288 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications.
| Part number | 2SD288 |
|---|---|
| Download | 2SD288 Datasheet (PDF) |
| File Size | 212.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
TGS |
2SD288 | Silicon NPN Power Ttransistors |
SavantIC |
2SD288 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications.