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isc Silicon NPN Power Transistor
2SD288
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 55V(Min) ·Collector Power Dissipation-
: PC= 25W(Max)@ TC= 25℃
APPLICATIONS ·Designed for power regulator, low frequency high power
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.0
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD288 Datasheet
