Datasheet4U Logo Datasheet4U.com

2SD289 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power regulator, low frequency high power amplifier applica

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD287A NPN/PNP Silicon Transistor ETC
2SD287B NPN/PNP Silicon Transistor ETC
2SD287C NPN/PNP Silicon Transistor ETC
2SD288 Silicon NPN Power Ttransistors TGS
2SD288 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD288 NPN Transistor
2SD200 NPN Transistor
2SD2000 NPN Transistor
2SD2001 NPN Transistor
2SD201 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD289 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.