Datasheet4U Logo Datasheet4U.com

2SD325 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.5A Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low freq

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD325 Silicon NPN Power Transistors SavantIC
2SD328 NPN/PNP SILICON TRANSISTOR ETC
2SD30 NPN Transistor Sanyo Semiconductor
2SD311 Silicon NPN Power Transistor Inchange Semiconductor
2SD313 NPN Transistor UTC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD320 NPN Transistor
2SD310 NPN Transistor
2SD312 NPN Transistor
2SD313 NPN Transistor
2SD314 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.5A ·Complement to Type 2SB511 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ·Recommended for 5 watts AF power amplifier output use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.