Datasheet4U Logo Datasheet4U.com

2SD330 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB514 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD330 NPN Transistor Sanyo Semicon Device
2SD331 Transistor Sanyo Semicon Device
2SD334 Si NPN Transistor Panasonic Semiconductor
2SD30 NPN Transistor Sanyo Semiconductor
2SD311 Silicon NPN Power Transistor Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD331 NPN Transistor
2SD334 NPN Transistor
2SD338 NPN Transistor
2SD339 NPN Transistor
2SD310 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SD330 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB514 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in output stage of 10W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.