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2SD362 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD362 isc website：www.iscsemi.