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2SD386 Datasheet

Manufacturer: Inchange Semiconductor
2SD386 datasheet preview

2SD386 Details

Part number 2SD386
Datasheet 2SD386-INCHANGE.pdf
File Size 208.54 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SD386 page 2

2SD386 Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications.

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