Datasheet4U Logo Datasheet4U.com

2SD386 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applicat

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD386 NPN Triple Diffused Planar Type Silicon Transistor Sanyo Semicon Device
2SD386 SILICON POWER TRANSISTOR SavantIC
2SD386A NPN Triple Diffused Planar Type Silicon Transistor Sanyo Semicon Device
2SD386A SILICON POWER TRANSISTOR SavantIC
2SD380 Silicon NPN Power Transistor Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD381 NPN Transistor
2SD382 NPN Transistor
2SD388 NPN Transistor
2SD389 NPN Transistor
2SD310 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.75 W 25 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD386 isc website：www.iscsemi.