Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
Complement to Type 2SB547
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in line-operated color
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD402
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min) ·Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SB547 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in line-operated color TV vertical deflection
of complementary symmetry circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IBM
Base Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
2SD402 Datasheet
