LZG 2SD400
SILICON NPN TRANSISTOR
FEATURES
Low-Frequency power Amp, Electronic GovernorAPPLICATIONS
TO-92MOD 5.800 6.200 0.400 0.600 0.900 1.100 8.400 8.800 13.800 14.200MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 25 25 5 1 0.9 150 -55-150 Units V V V A W ℃ ℃ 0.000 0.380 1.500 TYP 2.900 3.100 1.600 0.400 4.700 0.500 5.100 4.000 1.730 2.030 Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Symbol Test conditions V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, IB=0 V(BR)E...