LGE 2SD400
NPN Transistor
FEATURES
0.400 0.600 13.800 14.200 Low-Frequency power Amp, Electronic GovernorAPPLICATIONS
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 25 25 5 1 0.9 150 -55-150 Units V V V A W ℃ ℃ 4.000 2.900 3.100 0.000 0.380 1.600 1.500 TYP 0.400 4.700 0.500 5.100 1.730 2.030 Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance VCE(sat) VBE(sat) unless Test otherwise conditions specified) MIN TYP MAX UNIT V V V IC=1...