FEATURES
Power dissipation PCM: 900 mW (TA=25℃) TRANSISTOR (NPN) Silicon Transistor TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output CapactIance VCE(sat) VBE(sat) VCE=2V, IC=1A IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, f=1MHz Test conditions 123 MIN TYP MAX UNIT V V V Ic=10µA, IE=0 Ic=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA 25 25 5 1 1 60 30 0.3 1.2 180 15 µA µA 560 V V MHz pF fT Cob CLASSIFICATION OF Rank Range hFE(1) D 60...
Yukuto