Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
High Power Dissipation-
: PC= 100W(Max)@TC=25℃
Complement to Type 2SB555
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB555 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for high-fidelity audio frequency amplifier
output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SD425
isc website：www.
2SD425 Datasheet
