Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
High Power Dissipation-
: PC= 100W(Max)@TC=25℃
Complement to Type 2SB556
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB556 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for high-fidelity audio frequency amplifier
output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SD426
isc website：www.
2SD426 Datasheet
