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2SD459 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and sw

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.