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2SD45 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in power amplifier and switching applications.

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Datasheet Details

Part number 2SD45
Manufacturer INCHANGE
File Size 175.43 KB
Description NPN Transistor
Datasheet download datasheet 2SD45 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD45 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 5 A 8 A 3 A 50 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.
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