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2SD424 - NPN Transistor

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Part number 2SD424
Manufacturer INCHANGE
File Size 203.76 KB
Description NPN Transistor
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Description

High Power Dissipation- : PC= 150W@TC= 25℃ High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Complement to Type 2SB554 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage

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