Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Power Dissipation-
: PC= 150W@TC= 25℃
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
- plement to Type 2SB554
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier ,DC-DC converter and regulator...
