Datasheet Details
| Part number | 2SD424 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SD424-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD424 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SD424-INCHANGE.pdf |
|
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·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SB554 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD424 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD424 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD424 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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