Datasheet Details
| Part number | 2SD427 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.99 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD427_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD427 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.99 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD427_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 50W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD427 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SD427 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Part Number | Description |
|---|---|
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