2SD427 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SD427
Manufacturer	Inchange Semiconductor
File Size	204.99 KB
Description	Silicon NPN Power Transistors
Datasheet	2SD427 Datasheet
Additional preview pages of the 2SD427 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High Power Dissipation- : PC= 80W(Max)@TC=25℃ Complement to Type 2SB557 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio frequency amplifier output stage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitt

📁 Similar Datasheet

2SD424 - SILICON POWER TRANSISTOR (SavantIC)
2SD425 - (2SD425 / 2SD426) SILICON POWER TRANSISTOR (SavantIC)
2SD426 - (2SD425 / 2SD426) Silicon NPN Power Transistors (Savantic)
2SD400 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD401 - Silicon Transistor (Wing Shing Computer Components)
2SD401A - Power Transistor (Mospec Semiconductor)
2SD402 - SILICON POWER TRANSISTOR (SavantIC)
2SD402A - Power Transistor (NEC)

Other Datasheets by Inchange Semiconductor

2SD428 - Silicon NPN Power Transistors
2SD458 - Silicon NPN Power Transistors
2SD469 - Silicon NPN Power Transistor
2SD476N - Silicon NPN Power Transistor
2SD103 - Silicon NPN Power Transistors
2SD1032 - Silicon NPN Power Transistor

Published: Jun 1, 2012 |