Datasheet Details
| Part number | 2SD458 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.43 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD458_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD458 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.43 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD458_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCER Collector-Emitter Voltage RBE= 50Ω 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD458 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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