Datasheet Details
| Part number | 2SD103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.44 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD103_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors 2SD103.
| Part number | 2SD103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.44 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD103_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Complement to Type 2SB503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SD103 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
Compare 2SD103 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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