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2SD1030 - Silicon NPN Transistor

Key Features

  • q q q q q 0.65±0.15 +0.25 1.5.
  • 0.05 0.65±0.15 +0.2 1.1.
  • 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 50 40 15 100 50 200 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.
  • 236 EIAJ:SC.

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Datasheet Details

Part number 2SD1030
Manufacturer Panasonic
File Size 37.12 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.8 –0.3 +0.2 s Features q q q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 +0.2 1.1 –0.