0.1
1.27
+0.2
V mA mA mW ˚C ˚C
1 2 3
2.3±0.2
V
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO.
92 EIAJ:SC.
43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE.
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Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
5.0±0.2 4.0±0.2
q q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 50 40 15 100 50 300 150 –55 ~ +150 Unit V
1.27
13.5±0.5
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV.
5.1±0.2
s Features
0.45 –0.1
+0.2
0.45 –0.1
1.27
+0.2
V mA mA mW ˚C ˚C
1 2 3
2.3±0.2
V
2.54±0.
2SD1010 Datasheet
