| Part number | 2SD1031 |
|---|---|
| Datasheet | 2SD1031-INCHANGE.pdf |
| File Size | 183.61 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
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