Datasheet Details
| Part number | 2SD1038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1038-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1038.
| Part number | 2SD1038 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1038-INCHANGE.pdf |
|
|
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·High Current Capability ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 60 A PC Collector Power Dissipation @TC=25℃ 180 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1038 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A;
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