Datasheet Details
| Part number | 2SD1037 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1037-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1037 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1037-INCHANGE.pdf |
|
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1037 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1037 | SILICON POWER TRANSISTOR | SavantIC |
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