Datasheet Details
| Part number | 2SD1016 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.69 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1016-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor isc Product Specification 2SD1016.
| Part number | 2SD1016 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.69 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1016-INCHANGE.pdf |
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·High Collector-Base Voltage- : VCBO= 1500V(Min) ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.64 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1016 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
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