Datasheet Details
| Part number | 2SD428 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.94 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD428_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD428 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.94 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD428_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD428 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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