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2SD428 - Silicon NPN Power Transistors

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Part number 2SD428
Manufacturer Inchange Semiconductor
File Size 208.94 KB
Description Silicon NPN Power Transistors
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High Power Dissipation- : PC= 60W(Max)@TC=25℃ Complement to Type 2SB558 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 40W high-fidelity audio frequency amplifier output stage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emit

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