2SD469 Overview
· Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor TC=25℃ unless otherwise specified...