Datasheet Details
| Part number | 2SD469 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.60 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD469-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlingtion Power Transistor.
| Part number | 2SD469 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.60 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD469-InchangeSemiconductor.pdf |
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· Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD469 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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