With TO-3 package
Complement to type 2SB554
High power dissipation
High collector-emitter breakdown voltage : VCEO=180V(min)
APPLICATIONS
Power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD424
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DESCRIPTION ·With TO-3 package ·Complement to type 2SB554 ·High power dissipation ·High collector-emitter breakdown voltage : VCEO=180V(min)
APPLICATIONS ·Power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 15 1.
2SD424 Datasheet
