Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
- High Power Dissipation-
: PC= 100W(Max)@TC=25℃
- plement to Type 2SB555
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
- Remended for high-fidelity audio frequency amplifier output...
