Datasheet Details
| Part number | 2SD478 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.08 KB |
| Description | NPN Transistor |
| Datasheet | 2SD478-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD478 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.08 KB |
| Description | NPN Transistor |
| Datasheet | 2SD478-INCHANGE.pdf |
|
|
|
·Collector Power Dissipation: PC= 30W ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD478 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD478 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD478 | Silicon NPN Power Transistors | Savantic |
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