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2SD478 - NPN Transistor

General Description

Collector Power Dissipation: PC= 30W Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV vertical deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Power Dissipation: PC= 30W ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD478 isc website：www.iscsemi.