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2SD534 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters,converters,an

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD534 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers , high-speed inverters,converters,and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc webs