Datasheet Details
| Part number | 2SD535 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SD535-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD535.
| Part number | 2SD535 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SD535-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 12 A 15 A 150 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD535 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;
IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A;
| Part Number | Description |
|---|---|
| 2SD531 | NPN Transistor |
| 2SD533 | NPN Transistor |
| 2SD534 | NPN Transistor |
| 2SD536 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |
| 2SD529 | NPN Transistor |
| 2SD544 | NPN Transistor |