Datasheet Details
| Part number | 2SD534 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.30 KB |
| Description | NPN Transistor |
| Datasheet | 2SD534-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD534.
| Part number | 2SD534 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.30 KB |
| Description | NPN Transistor |
| Datasheet | 2SD534-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers , high-speed inverters,converters,and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD534 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 110 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;
IB= 0.6A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A;
IB= 1A 1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A;
| Part Number | Description |
|---|---|
| 2SD531 | NPN Transistor |
| 2SD533 | NPN Transistor |
| 2SD535 | NPN Transistor |
| 2SD536 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |
| 2SD529 | NPN Transistor |
| 2SD544 | NPN Transistor |