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2SD535 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) Excellent Safe Operating Area High Current Capability Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high curre

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD535 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 12 A 15 A 150 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.