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2SD551 - NPN Transistor

General Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Complement to Type 2SB681 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

For AF power amplifier applications.

Recommended for use in outp

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB681 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier applications. ·Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD551 isc website：www.iscsemi.