Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
High DC Current Gain
: hFE= 2000(Min) @IC= 3.0A
Low Saturation Voltage
Complement to Type 2SB601
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for lo
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isc Silicon NPN Darlington Power Transistor
2SD560
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifiers and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
2SD560 Datasheet
