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2SD581 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 40~60W audio amplifier power output applic

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isc Silicon NPN Power Transistor 2SD581 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 40~60W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.