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2SD582 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 7A Complement to Type 2SB612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 80~100W aud

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 7A ·Complement to Type 2SB612 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 80~100W audio amplifier power output applications.