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2SD617 - NPN Transistor

General Description

Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RA

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD617 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 UNIT V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage IC Collector Current ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6 V 8 A 12 A 100 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.